Stimulated emission in In0.5(AlxGa1−x)0.5P quantum well heterostructures

Abstract

For shorter wavelength lasers (λ<6000 nm), the most prospective III–V alloy system is In1−yGayP lattice matched to GaAs (y∼0.5) and its variant, the case of AlGa substitution, In0.5(AlxGa1−x)0.5P. We report the growth of quantum well heterostructures (QWHs) in this system by metalorganic vapor phase epitaxy and the photopumped (77 K) laser operation of InAlGaP QWHs at wavelengths ranging from the orange to the green portions of the spectrum. Continuous wave (CW) photopumped laser operation at 77 K is achieved in the range from ∼5570.0 to ∼550.0 nm (2.175 to 2.25 eV), and pulsed operation to wavelenghts as short as 543.0 nm (2.283 eV). Room temperature pulsed laser operation is demonstrated in the range from ∼610.0 to 590.0 nm (2.032 to 2.101 eV). The shortest lasing wavelengths observed at 77 K (543.0 nm pulsed and 553.0 nm CW) and at 300 K (593.0 nm pulsed and 625.0 nm CW) represent the highest energy lasers yet reported for this material system, or for any III–V alloy system. This paper will describe the epitaxial layers grown, the characterization of these layers using a variety of techniques, including TEM, and the laser operation experiments and results.