Abstract

From measurements of the energy shift of the laser emission and the threshold current as a function of the magnetic field up to 25 T (DC) and at T = 9 K, localization of the shallow donors in the moderately doped (≈ 1017 cm-3) n-type active layer of a double heterostructure injection laser has been observed. A fit of the measured energy shift of the donor ground state as a function of the magnetic field with theoretical calculated values yields the impurity concentration in the active layer and the carrier density at threshold at B = 0 T.

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