Abstract
The radiative processes and scattering mechanism of electrons in the very thin p-type active layer of a double heterojunction GaAs/AlGaAs injection laser have been studied. Measurements of the shift in the energy of the laser emission were made as a function of the magnetic field up to 25 T (DC) at low temperatures (T ≲ 40 K). The maximum of the gain curve has been calculated as a function of the magnetic field for radiative transitions in a p-type active layer, which occur between the occupied Landau levels in the conduction band and the unoccupied acceptors. The observed shift is in accordance with these calculations. From the measurements at very high magnetic fields, in which only the lowest Landau level contributes to the radiative emission, the carrier density at threshold and a temperature dependent scattering time for the electrons in the active layer is determined.
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