Abstract
Spontaneous emission and optical gain are studied in MOCVD-grown epitaxial layers of GaAs co-doped with erbium and oxygen. Optimal growth conditions are used to obtain the high erbium concentrations up to 8 × 1018 cm-3. The measurements by the Shaklee — Leheny method revealed the optical gain ~45 cm-1 at rather low pump intensity ~0.1 kW cm-2 77 K.
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