Abstract
Stimulated emission and laser action with well developed longitudinal optical modes from an Al0.13Ga0.87N∕GaN double heterostructure with a 25nm GaN active layer grown on a silicon substrate by metal-organic chemical vapor deposition is demonstrated. Lasing was observed from cleaved platelets at room temperature with well resolved Fabry-Pérot modes at a wavelength as short as 368nm at room temperature. A clear threshold was observed in the plot of the emission intensity versus the pumping power at both 77K and room temperature. The effective index of refraction during laser operation was measured to be 2.65.
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