Abstract
It is necessary to control the size, shape, and uniformity of self-assembled andself-organized nanocrystals in order to use them in real devices. The way to achieve this inepitaxial nanocrystal arrays is by manipulating the bulk stress and/or the surfacestress. In this work, an additional and fundamentally different mechanism ofCoSi2 nanocrystal size selection is reported, based on a preferential reaction of Co adatoms withSi ledge atoms at the step bunches on a vicinal Si(111) surface, where the meansilicide nanocrystal size and nanocrystal–nanocrystal separation distance along theledge are determined by the step-bunch height. These results may have importantimplications for the lithography-free fabrication of ordered functional nanostructureensembles.
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