Abstract
Metalorganic Vapor Phase Epitaxy (MOVPE) growth of GaN on SiC substrates is dominated by the step-flow growth mode within a 10 µm2 area. Compared to the growth on sapphire substrates, there is no spiral growth originating from screw dislocations and two dimensional islands within the 10 µm2 area, showing that the step-flow growth mode is dominant. The surface mostly consists of 140-nm-wide atomic terraces and doubly stacked monolayers (DSM) corresponding to a unit cell height. This coupling of DSM dissolves into a pair of monolayer steps at the adjacent DSM steps forming a twilled step (TWS) structure, due to the asymmetry between these two layers in a GaN unit cell.
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