Abstract
We report the observation and theory of the morphological evolution of vicinal (001) ridges on V-grooved GaAs surfaces during metal organic vapor-phase epitaxy. The pattern of the nonplanar substrate induces unusual ordering of monatomic steps, different from the free step flow observed on a nonpatterned vicinal surface. The step edges develop profiles that kinetic Monte Carlo simulations reveal are determined by the width of the ridges between neighboring V grooves and the kinetics of interfacet mass migration between the ridge and the bounding sidewalls of the V groove.
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