Abstract
We investigate the growth rate of GaAs homoepitaxy on (001) just and vicinal substrates as a function of substrate temperature, feeding rate of source gases, and H2 purge duration during the atomic layer epitaxy (ALE) process. The desorption of AsHx (x=0, 1, 2) on vicinal surfaces during ALE was confirmed to be the migration of adsorbed AsHx molecules on the surface and desorption at the steps.
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