Abstract
Nowadays, the development of nano-synthesis has turned to controllable design for specific demands in micro-nano device application, to be integrated into functional units more conveniently with low-cost and efficiency principles. In this case, an appropriate approach for directly obtaining horizontally aligned nanowires in a large scale would be of great significance in future micro-nano device integration. Here, on the HOPG surface, we managed to achieve this. The approach is versatile to various kinds of materials. Horizontally aligned nanowires of Al-C based materials, such as Al4C3 and Al4O4C, were achieved. All of the nanowires exhibit a high degree ordered alignments and possess super aspect ratios with uniform widths of about 100 nm and lengths on the millimeter level. We believe the assembly mechanism lies in a step-edge induced ordered growth process, through which quaternary Al-Si-O-C nanoball alignment could also be obtained. It is expected that this method could be beneficial to adjust many useful materials for micro device integration in the future.
Published Version
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