Abstract
Aberration-corrected scanning transmission electron microscopy (STEM) is becoming a very powerful tool to directly characterize defect structures in materials and devices at atomic dimensions. Here, we review our recent researches on material interface characterization using STEM. First example is that the direct imaging of individual dopant atoms within a buried alumina interface. The second example is the atomic-scale characterization of Au nanoislands on TiO2 substrates. The ability to directly probe individual atoms within buried interfaces at very high-resolution will significantly assists our understanding of interface structures and related properties in many advanced materials and devices.
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