Abstract
GeSi alloys are of great interest because of potential applications to high-performance semiconductor devices. For example, the fastest heterojunction bipolar transistor (in Si-based materials) in 1990 was fabricated by using a strained GeSi layer. To accomplish this, it is necessary to keep the Ge concentration and the thickness of the GeSi films below a “critical thickness” to avoid relaxation of the GeSi alloys. It is therefore important to control the Ge concentration and the thickness of GeSi films. When the thickness of the GeSi film is under 10 nm, common characterization techniques such as RBS (Rutherford Backscattering Spectrometry), Auger analysis and SIMS (Secondary Ion Mass Spectrometry) reach resolution limits. The accurate measurement of Ge profiles in GeSi thin films becomes a difficult but important issue. In this paper, we measure Ge concentration profiles by different analytical techniques obtained from STEM and compare them with results from SIMS and Auger analysis.
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