Abstract
We carried out a systematic comparison on the steady-state and transient electron transport properties in a monolayer silicon (silicene) and bulk silicon using the semi-classical ensemble Monte Carlo method. We found that at steady state the electron drift velocity in bulk Si is higher than silicene which can be attributed to the larger phonon scattering rate of silicene. However, the transient electron drift velocity of silicene can increase up to 2.6 × 107 cm/s at applied electric field of 40 kV/cm, which is 30 % higher than the peak overshoot value of bulk Si. This advantage is not preserved at steady state condition. Based on the drift velocity overshoot characteristics, we conclude that silicene offers a better advantage than bulk Si when the device dimension is less than 20 nm.
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