Abstract
Assuming that the origin of stimulated Raman scattering (SRS) lies in third-order effective (Raman) susceptibility arising due to nonlinear induced polarization, we obtained expressions for steady-state and transient Raman gain coefficients of weakly-polar magnetoactive doped semiconductors under various geometrical configurations. The threshold pump intensity and optimum pulse duration for the onset of transient SRS are estimated. The dependence of Raman gain coefficients on doping concentration, external magnetostatic field, magnetostatic field inclination, scattering angle and pump pulse duration are explored in detail with aim to determine suitable values of these controllable parameters to enhance Raman gain coefficients at lower threshold intensities, and to search the feasibility of efficient semiconductor nonlinear devices based on Raman nonlinearities. Most expectedly, the technological potentiality of weakly-polar magnetoactive doped semiconductors as hosts for compression of scattered pulses and fabrication of efficient nonlinear devices such as frequency converters, Raman amplifiers and oscillators etc. based on Raman nonlinearities are established.
Published Version
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