Abstract
Silicon carbide (SiC) is an attractive material for high-temperature, high-power, high-frequency applications, due to its outstanding electrical, mechanical properties, and chemical inertness. SiC semiconductor technology has been developed widely since the commercialization of 6H-SiC and 4H-SiC bulk SiC wafers in 1990s. This paper reviews the recent patents on SiC semiconductor technology, introduces the achievements both in academy and industry for micro- machining technology, circuit, devices. All these developments are driving high-performance SiC devices into harsh envi- ronment applications.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
