Abstract
The development of silicon carbide (SiC) bulk crystal growth technology in the last decade has brought about tremendous progress in the techniques of growing large high-quality SiC bulk crystals. SiC crystals up to four inches in diameter have been successfully demonstrated, and three-inch SiC substrates have already been brought to market. However, the commercialization of SiC devices is still largely limited due to relatively high density of structural defects in SiC bulk crystals, and thus it is abundantly clear that the further successful development of SiC semiconductor technology relies on achieving an understanding of the defect formation processes during SiC bulk crystal growth. This paper aims to describe the current understanding of defect formation during SiC bulk crystal growth, and it also tries to provide strategies to reduce the crystallographic defects in SiC bulk crystals.
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