Status and Prospects of ZnO-Based Resistive Switching Memory Devices.

Firman Mangasa Simanjuntak,Tseung-Yuen Tseng,Kung-Hwa Wei,Debashis Panda

doi:10.1186/s11671-016-1570-y

Abstract

In the advancement of the semiconductor device technology, ZnO could be a prospective alternative than the other metal oxides for its versatility and huge applications in different aspects. In this review, a thorough overview on ZnO for the application of resistive switching memory (RRAM) devices has been conducted. Various efforts that have been made to investigate and modulate the switching characteristics of ZnO-based switching memory devices are discussed. The use of ZnO layer in different structure, the different types of filament formation, and the different types of switching including complementary switching are reported. By considering the huge interest of transparent devices, this review gives the concrete overview of the present status and prospects of transparent RRAM devices based on ZnO. ZnO-based RRAM can be used for flexible memory devices, which is also covered here. Another challenge in ZnO-based RRAM is that the realization of ultra-thin and low power devices. Nevertheless, ZnO not only offers decent memory properties but also has a unique potential to be used as multifunctional nonvolatile memory devices. The impact of electrode materials, metal doping, stack structures, transparency, and flexibility on resistive switching properties and switching parameters of ZnO-based resistive switching memory devices are briefly compared. This review also covers the different nanostructured-based emerging resistive switching memory devices for low power scalable devices. It may give a valuable insight on developing ZnO-based RRAM and also should encourage researchers to overcome the challenges.

Highlights

Semiconductor memory is an indispensable component and backbone of all modern electronic devices
When the device is on LRS, low negative bias of −1 V was applied on top electrode (TE); oxygen vacancies move toward the MgZnO layer, by leaving some filament gap in the ZnO layer and make the device in high resistance state (HRS)
Sneak Current Prevention in ZnO-Based resistive random access memory (RRAM) To resolve the physical scaling issues of conventional nonvolatile memory devices, crossbar array architecture has been considered as an attractive construction due to the scalability, simplicity, and multiple stackability of the structure

Summary

Introduction

Semiconductor memory is an indispensable component and backbone of all modern electronic devices. Effect of Deposition Parameter in ZnO-Based RRAM Devices Besides electrodes, microstructural properties and defects in ZnO film strongly affect the switching behavior as well.

Results

Conclusion