Abstract
A crystal of III–V ternary alloy semiconductor A xB 1−xC (x=0 ∼ 1) is composed of only five different types of tetrahedron cells A 0.25nB (1−0.25n)C (n=0, 1, 2, 3, 4). The statistics of these cells are derived by minimizing the free energy which is the summation of the strain energy of cells and the entropy. The strain energy is calculated by the valence-force-field model. The results show that at thermal equilibrium the atom arrangement of AlGaAs alloys is more random as compared with that of InGaAs alloys.
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