Statistical Modelling of ft to Process Parameters in 30 NM Gate Length Finfets

B Lakshmi,R Srinivasan

doi:10.5121/vlsic.2010.1304

Abstract

This paper investigates the effect of process variations on unity gain frequency (ft) in 30 nm gate length FinFET by performing extensive TCAD simulations. Six different geometrical parameters, channel doping, source/drain doping and gate electrode work function are studied for their sensitivity on ft. It is found that ft is more sensitive to gate length, underlap, gate-oxide thickness, channel and Source/Drain doping and less sensitive to source/drain width and length, and work function variations. Statistical modelling has been performed for ft through design of experiment with respect to sensitive parameters. The model has been validated through a comparison between random set of experimental data simulations and predicted values obtained from the model.

Highlights

The progress in CMOS technology has made it well suited for RF and microwave operations at high level of integration [1], and the continuous improvement of the device performance has made it a contender for low-power and, eventually, low-cost radio front end
We have modelled ft in terms of the most sensitive parameters like gate
3.1 Sensitivity Analysis of Process Parameters The nine different process parameters are varied one at a time, according to the range given in Table 1 and their sensitivity to ft is analysed . 3.1.1 Variation in Gate Length Figure 3 shows the variation of ft against Lg

Summary

30 NM GATE LENGTH FINFETS

This paper investigates the effect of process variations on unity gain frequency (ft) in 30 nm gate length FinFET by performing extensive TCAD simulations. Channel doping, source/drain doping and gate electrode work function are studied for their sensitivity on ft. It is found that ft is more sensitive to gate length, underlap, gate-oxide thickness, channel and Source/Drain doping and less sensitive to source/drain width and length, and work function variations. Statistical modelling has been performed for ft through design of experiment with respect to sensitive parameters. The model has been validated through a comparison between random set of experimental data simulations and predicted values obtained from the model. KEYWORDS ft , FinFET, process variations, Statistical modelling, Design of Experiments

INTRODUCTION

SIMULATION METHODOOGY

RESULTS AND DISCUSSION

Variation in Underlap

CONCLUSION