3D-TCAD simulation study of process variations on f<inf>t</inf> in 30 nm gate length FinFET

Abstract

This paper investigates the effect of process variations on unity gain frequency (f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">t</sub> ) in 30 nm gate length FinFET by performing extensive 3D TCAD simulations. Sensitivity of f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">t</sub> on different geometrical parameters, channel doping, source/drain doping and gate electrode work function are studied. It is found that f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">t</sub> is more sensitive to gate length, underlap, gate oxide thickness, source/drain doping and corner radius, and less sensitive to source/drain length, source/drain cross-sectional area, hard-mask height, fin-taper and work function variations.