Abstract
Random telegraph noise (RTN) has become an important reliability issue at the sub-65nm technology node. Existing RTN simulation approaches mainly focus on single trap induced RTN and transient response of RTN, which are usually time-consuming for circuit-level simulation. This paper proposes a statistical algorithm to study multiple traps induced RTN in digital circuits, to show the temporal distribution of circuit delay under RTN. Based on the simulation results we show how to protect circuit from RTN. Bias dependence of RTN is also discussed.
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