Gate current random telegraph noise and single defect conduction

Abstract

Random Telegraph Noise (RTN) in (a) the drain current ID (VD=100mV) and (b) the gate current IG (VG=0.7V) is correlated in a deeply scaled nFET. Random Telegraph Noise (RTN) in the gate current of nanoscaled Field-Effect Transistors (FET) is discussed.The RTN capture and emission times depend strongly on temperature and gate voltage.The RTN amplitude is observed to reach up to tens of percent of gate current.A correlation of gate and drain current fluctuations links the charge and conduction states of a single gate oxide trap.A model involving a single trap with a metastable state is proposed. The properties of Random Telegraph Noise (RTN) in the gate current of nanoscaled Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFET) are discussed. While the gate current RTN capture and emission times depend strongly on temperature and gate voltage, the RTN amplitude, corresponding to single gate oxide leakage path, appears independent of temperature and scaling with the gate current. The RTN amplitude is observed to reach up to tens of percent of gate current. In carrier separation measurements the fluctuations typically appear in one component only. A correlation of drain and gate current fluctuations allows linking the charge and conduction states of a single gate oxide trap. A model for drain current RTN involving a metastable state is extended to include conduction through the single trap and gate current RTN.