Abstract
For a model of the collective motion of minority charge carriers (MCCs) generated by various external energy sources (broad electron and light beams) in a homogeneous semiconductor material, a method for approximating their statistical characteristics (mathematical expectation and autocorrelation function) is described. The developed approach uses the projection method based on application of the theory of matrix operators. It was assumed that a material’s electrophysical parameters (MCC lifetime, diffusivity, and surface recombination rate) are random quantities and obey the truncated normal distribution law. A comparative analysis of the dispersion effect of these quantities on the MCC depth distribution is performed.
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