Static electrification of solid oxide in liquid metal and electrical double layer at the interface

Abstract

Static electrification of a solid oxide, say a semiconducting oxide in liquid metal, is mainly due to electron transfer between two phases. Excess electrons in the liquid metal phase provided by the oxide give rise to an electrical double layer at the interface. The electrical double layer may be divided into three parts, an immobile inner layer, a compressed diffuse layer, and a flat layer extending into the bulk liquid metal. Differential potential analysis and the induced emf method were used to measure the potential of the compressed diffuse layer and the excess electron density of the flat layer, respectively. Results show that most oxides in liquid metals carry positive charges on their surfaces and the potentials of the compressed diffuse layer are in the range of 3 to 42 μV. Such a low potential implies that the diffuse layer is considerably compressed. The excess electron densities of the flat layer are on the order of 10 22 electrons/m 3 of Hg and their contributions to surface charges of oxide are in the range of 10 17 to 10 18 charges/m 2 for the oxide/mercury systems with a solid density of 0.3 wt% at room temperature.