Abstract
Long semiannular Josephson junctions coupled to in-plane external static and rf magnetic fields are investigated analytically and numerically. A spatially homogeneous dc magnetic field applied in the plane of the dielectric barrier and perpendicular to a plane containing the junction boundaries induces a potential well in which trapped fluxons are pinned in the absence of a bias current. An applied rf field produces phase-locked fluxon motion manifesting constant voltage steps in the current-voltage characteristics. Analytical expressions obtained for depinning current, power-balance velocity, phase-locking range, and constant voltage steps using perturbational analysis are found to be in very good agreement with the numerical results. The proposed device is suitable for studying quantum dynamics of fluxons trapped in a potential well and in the fabrication of devices like submillimeter-wave local oscillators and constant-voltage standard devices, etc.
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