Abstract
The possibility of using the results of measuring the quasi-static current-voltage characteristics and high-frequency impedance of symmetrically doped bicrystal structures obtained by direct bonding to simultaneously determine the electrical parameters of the bonding interface [differential density of the surface states ν(E)] and the near-boundary layers (the dopant-concentration distribution in the vicinity of the boundary) is discussed. Attention is given to the fact that the ratio of static current to high-frequency conductivity is extremely sensitive to the presence of “punch-throughs” (regions with enhanced electrical conductivity) in the potential barrier of the bonding interface. It is shown experimentally that the electrical conductivity of actual bicrystal structures obtained by direct bonding of silicon is governed to a large extent by the presence of such “punch-throughs,” which should be taken into account, in addition to the possible doping of interfacial layers in the course of bonding, when determining the dependence ν(E).
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
