Abstract
The static and dynamic behavior of resonant-tunneling diodes is studied using the improved Wigner function model. In the study of static current-voltage characteristics, the exponential decrease of the peak current with the barrier thickness and the existence of a proper barrier thickness for which the peak-to-valley current ratio becomes the maximum are demonstrated. In the large signal simulation, the external current response to an abrupt bias switch is analyzed. As a result, it is found that the switching time of resonant-tunneling diodes is principally determined by the electron effective mass of the material system used rather than by such a device structure as the thickness of the double barrier and the doping density of the electrode.
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