Static and Dynamic Characterization of 1200 V SiC MOSFETs at Room and Cryogenic Temperatures

Abstract

Cryogenic operation of power electronics converters plays a key role in the development of the future electric aircraft systems. Characterization of semiconductor switches in the cryogenic environment is pivotal for implementation of the cryogenic power electronics converters. This paper characterizes two groups of Planar and Trench SiC MOSFETs from room temperature to –175°C. The objective is to explore the impact of the cryogenic environment on static and dynamic behavior of the SiC MOSFETs. The dynamic characteristics of these semiconductor switches are investigated by using a double pulse test circuit. The test circuit is placed inside a cryogenic chamber, which is able to accurately adjust the temperature. Important dynamic characteristics such as voltage and current rise and fall times, turn-on, turn-off, and total switching energy losses are investigated. It is shown that the impacts of the cryogenic environment on the two groups of SiC MOSFETs are not identical. Furthermore, the impact of gate driver output voltage on the switching energy losses is discussed. The static characteristics of the SiC MOSFETs are explored by using the same cryogenic chamber and a curve tracer. Breakdown voltage, gate-source threshold voltage, on-state resistance, body diode forward voltage, and average transconductance are the static parameters that are measured.