Abstract
Problems associated with power device characteristics when power devices are connected in parallel, such as thermal stability and balanced switching behavior, can be solved by using insulated gate bipolar transistors (IGBTs). The author deals with parallel IGBT behaviors analyzing both static and dynamic characteristics. The influence of heatsink mounting, layout, and drive circuit are described in order to demonstrate the best way to make IGBTs parallel for optimum performance. In addition, the major advantages of the ISOTOP package are shown. >
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