State and distribution of point defects in doped and undoped bridgman-grown CdTe single crystals

Abstract

Using spark-source mass spectrometry, atomic absorption spectrometry and various optical techniques, a study is made of the concentrations of impurities (total and point-defect concentrations), charge carriers and precipitates as well as of their axial distributions in Bridgman crystals grown with and without an extra Cd source. It is found that the concentrations of substitutional impurities are controlled by Cd and Te vacancies which form during the growth process. When the crystals are cooled after growth, part of the Cd vacancies are occupied by impurity atoms, while part of them cluster to form Te precipitates. The vacancy concentrations are modified, and the latter reaction is suppressed, in the case of growth under Cd overpressure. Intentional doping with halogens leads to formation of persistent Te-site donor/Cd-vacancy complexes.