Startified thermal degradation in blue InGaN quantum well structures: P-GaN growth temperature and its influence on quantum well optical properties

Abstract

Thermal degradation in blue InGaN multi-quantum well (MQW) structures induced by varying high p-GaN growth temperature and the subsequent influence on the optical properties of MQW are investigated. The results indicate that higher p-GaN growth temperatures improve p-GaN layer contact quality, but may lead to an optical property degradation of InGaN MQWs. A stratified thermal degradation mechanism is observed. The degradation primarily affects the upper quantum barrier layers and results in indium desorption and re-evaporation, where elevated p-GaN growth temperatures may induce more indium segregation and decomposition than in lower layers of MQW. In extreme conditions, such as 1060℃, indium atoms in lower layers escape, causing partial lattice structure corruption and severe degradation in MQW structure, which is also more distinctive in the upper layers.