Abstract

Electric field induced heavy hole excitons in a strained GaxIn1-x As/GaAs quantum dot are studied by considering geometrical confinement effect. A cylindrical quantum dot with a GaxIn1-x As surrounded by a GaAs barrier material. The exciton binding energy and stark shift in the presence of electric field as a function of dot radius are obtained. Calculations include the anisotropy, non-parabolicity of the conduction band, strain effects and the spatial confinement effect. A variational formulism is employed to obtain the energy eigen values. The reduction of binding energy is obtained with the application of electric field whereas the increase of binding energy is observed with the geometrical confinement effect.

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