Abstract
Si nanocrystals (Si nc) were formed by the implantation of Si+ into a SiO2 film on (100) Si, followed by high-temperature annealing. High-resolution transmission electron microscopy has been used to examine the microstructure of the Si nc produced by a high-dose (3×1017cm−2) implantation. It is shown that there are only stacking-fault (SF) defects in some nanocrystals; while in others the stacking faults (SFs) coexist with twins. Two kinds of SFs, one being an intrinsic SF, the other being an extrinsic SF, have been observed inside the Si nc. More intrinsic SFs have been found in the Si nc, and the possible reasons are discussed. These microstructural defects are expected to play an important role in the light emission from the Si nc.
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