Abstract
AbstractWe report about defect‐related emission bands in GaN. We establish a direct correlation between results from spatially and spectrally resolved cathodoluminescence bands at 3.32, 3.23, 3.20, 3.16, and 3.07 eV with findings obtained by transmission electron microscopy. The band around 3.32 eV was unambiguously assigned to I2 basal plane stacking faults (BSFs). The bands at 3.23, 3.20, 3.16, and 3.07 eV were detected in sample regions, where BSFs exist, but were not assigned to specific defect types, except for the 3.07 eV line which is a phonon replica of the transition at 3.16 eV.
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