Stacking fault reduction in Silicon-on-Insulator (SOI) islands produced by Selective Epitaxial Growth (SEG) of Silicon using a thermally nitrided SiO 2 field insulator

Abstract

A method to fabricate silicon-on-insulator (SOI) device sized islands, using Epitaxial Lateral Overgrowth (ELO) from the Selective Epitaxial Growth (SEG) of Silicon, has ≈96.3% stacking fault-free SOI islands when SiO 2 was used as the field insulator. When a nitrided thermal SiO 2 was used ≈99% of the small islands were defect-free. Islands with rounded corners and nitrided oxide had stacking fault defects of less than 500/cm 2.