Abstract
Pairs of bright spots are observed in microphotoluminescence intensity maps of ZnSe/ZnMgSSe quantum-well structures. These pairs are exactly aligned parallel to the [1 1 0] or [ 1 ̄ 1 0] directions. Atomic-force microscopy and plan-view transmission electron microscopy reveal that the bright emission spots are related to pairs of stacking faults. The enhanced radiative recombination is a result of exciton localization in the region where the stacking faults intersect the quantum wells. Cross-section transmission electron microscopy and microphotoluminescence spectroscopy show that in the case of Frank-type stacking faults (oriented along [1 1 0]) the wells are enlarged by up to 12 bilayers. The exciton localization is much shallower in the case of Shockley-type stacking-fault pairs (oriented along [ 1 ̄ 1 0] ).
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