Abstract

Abstract The distribution of stacking fault in single crystals of ϵ-GaSe grown by the Bridgman technique has been studied by combined measurements of X-ray diffraction and photoluminescence. The results show that the stacking fault is distributed randomly over the crystal with the fault layer normal to the c -axis. One stacking fault takes place approximately in every 15 layers for a typical crystal which shows multiple splittings of the free exciton level in the luminescence spectrum. For Bridgman-grown crystals of ϵ-GaSe, the average distance between the nearest neighbor fault planes is determined to be much longer than the Bohr diameter (60 A) of the direct 1 s exciton.

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