Abstract
Resonant Raman scattering (RRS) in BiI 3 has been studied at liquid helium temperature. The two-phonon Raman modes show resonance enhancement for excitation above the indirect absorption edge and their cross sections have similar dispersions to those of Cu 2O by Yu and Shen. When tuning the excitation photon energy at four sharp absorption lines, which were assigned to the bound excitons at stacking faults in a previous work, the different behaviors are observed in the RRS spectra; three of them show rather broad one-phonon Raman lines, while for the other one, a new additional one-phonon line appears. On the basis of these experimental results the electronic states and phonon modes involved are discussed and a probable model of exciton structure responsible for the sharp absorption line at the indirect exciton energy is presented.
Published Version
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