Abstract
Uncooled, long-wavelength photovoltaic detectors suffer from poor quantum efficiency and low differential resistance. The problem can be solved by the use of stacked, multiple heterojunction-photovoltaic cells with thin absorber regions. We report here numerical simulation and optimization of the stacked, multiple Hg1−xCdxTe heterojunction cells used for detection of 10.6-µm infrared (IR) radiation, operating as zero-bias photovoltaic devices or Auger-suppressed photodiodes. It is shown that the devices can be used as high-performance and fast-response detectors of long-wavelength radiation operating at ambient temperature with detectivities larger by more than one order of magnitude than that of the present practical devices.
Published Version
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