Abstract
HighlightsA limitedly Zn-doped MgF2 passivation layer consisting of a porous pure MgF2- and gradient Zn-doped MgF2-regions was developed for stable Zn metal anodes with excellent reversibility to 8000 cycles at 10.0 mA cm−2.The MgF2 region facilitates facile de-solvation of Zn ions and effective hydrogen evolution reaction suppression.The Zn-doped MgF2 region enhances transfer kinetics and homogeneous deposition of Zn ions by interfacial polarization between Zn dopant and MgF2 matrix, and high concentration of the Zn dopant as fine nuclei.
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