Abstract
Nanocrystalline silicon thin films were deposited on thin SiO2 layers by low pressure chemical vapour deposition (LPCVD) at temperatures between 580 and 610 °C. The layer thickness was between 15 and 30 nm. The silicon dioxide layer of thickness between 5 and 20 nm was thermally grown on silicon by high temperature thermal oxidation. Photoluminescence (PL) spectra excited by the 488 nm argon ion laser line showed two different emission bands, one present in all luminescent samples and centered between 500 and 600 nm and the other between 700 and 800 nm which was obtained only for some samples. Stable electroluminescent devices were obtained, their electrical characteristics being dominated by the presence and quality of the oxide layer. Results on I—V and C—V measurements will be reported and device performance will be discussed.
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