Abstract
We report on the properties of metal-semiconductor-field-effect-transistors (MESFETs) on ZnO films grown using the filtered cathodic vacuum arc (FCVA) technique. FCVA ZnO films deposited on a-plane sapphire at 200 °C showed good structural and electrical properties that improved further on annealing at 800 °C in oxygen, due to the formation of larger grains with lower inter-grain transport barriers. MESFETs with silver oxide and iridium oxide Schottky gates on these annealed films showed excellent long-term stability with low ideality factors (<1.3), low gate leakage, and channel mobilities up to 50 cm2/Vs that were unchanged with both age and stress testing.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
