Abstract
The ferroelectric properties of 20 nm Hf0.5Zr0.5O2 (HZO) thin films has been investigated in a wide temperature range from 100 K to 450 K. The remnant polarization of HZO thin films decreases slightly from 24.6 μC cm−2 (100 K) to 17.9 μC cm−2 (450 K), indicating a robust temperature stability. The capacitors also exhibit excellent endurance properties up to 109 cycles at 100 K and 300 K, and their endurance cycles slightly degrades to 108 at an elevated temperature of 450 K. The results show that HZO ferroelectric thin films have great potential for future emerging memory applications in various harsh temperature environments.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
