Abstract
Hf0.5Zr0.5O2 (HZO) thin films were deposited on Si substrates with and without TiN seed layers using a simple and cost-effective solution synthesis. The crystalline quality of the as-deposited HZO films were improved through a post deposition annealing process. Cross-sectional transmission electron microscope analyses of HZO/TiN/Si structure revealed a clear and clean interface formation between HZO and TiN layers. X-ray diffraction and Raman analyses confirm that, after the post annealing process, HZO films deposited on bare Si substrate crystallized in monoclinic phase while the HZO films deposited on TiN/Si substrates tend to crystallize in tetragonal or orthorhombic crystal structure. Varying crystal structure through controlling the post deposition annealing temperature is a promising technique to manipulate the electrical properties of solution processed HZO thin films.
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