Abstract
The first stable operation (>100 h) of a AlGaN/GaN metal-oxide semiconductor heterostructure field effect transistor (MOSHFET) at very high RF power levels (∼20 W/mm at 2 GHz and 55 V drain bias) is reported. These record values are attributed to a current collapse-free performance resulting from using a field-plate over a leaky dielectric, and to the low forward gate currents owing to the MOS-design.
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