Stepped Poly Gate In0.53Ga0.47As/InP MOSHFET to Enhance the Device Performance

Abstract

A new group $\text{In}_{0.53}\text{Ga}_{0.47}\text{As}/\text{InP}$ stepped poly gate Metal Oxide Semiconductor Heterostructure Field Effect Transistor (MOSHFET)has been proposed, which exhibits a significant improvement in On current, transconductance, threshold voltage, and On-state resistance without affecting the off state performance. The proposed device is simulated using 2D Sentaurus TCAD simulator. In the proposed structure the stepped gate (SG)region is divided into three steps with different oxide thickness from source to drain. The first and third sections of the gate are made up of p+ poly and the second section is of n+ poly. By using the poly gate, the simulation results of stepped gate MOSHFET persists lesser gate to drain capacitance, as a results there is an approximately 23% improvement On current, 31% improvement of On resistance, 16% improvement of transconductance and 44% improvement of threshold voltage roll off as compared to conventional MOSHFET.