Stabilization of space charge polarization in ion-dispersed gate dielectric layer of organic transistors by ultraviolet illumination for write-once read-many memory

Abstract

In this work, a new type organic field effect transistor (OFET) based write-once read-many memory (WORM) device was developed. The device uses an ultraviolet (UV) cross-linkable matrix polymer mixed with ionic compounds to form an ion-dispersed gate dielectric layer. Under an applied gate voltage bias, migration of cations and anions in opposite directions forms space charge polarization in the gate dielectric layer, resulting in change of the electrical characteristics. It is shown that, with UV illumination to cross-link the matrix polymer, the formed space charge polarization can be stabilized. Therefore, the OFET can be operated as a WORM with the applied voltage bias to define the polarization and in turn the stored data, and the UV illumination to stabilize the stored data.