Abstract
Abstract We report the effect of swift heavy ion irradiation on non-stoichiometric hydrogenated amorphous silicon nitride films (a-SiNx:H), grown on Si substrate by Photo- Chemical vapor deposition. A significant increase in refractive index of films due to Si rich phase stabilization upon irradiation is observed, which is supported by UV–Vis spectroscopy. Further, X-ray photoelectron spectroscopy (XPS) shows the improved Si rich SiNx phase at surface of films. Fourier transform Infrared spectroscopy suggests increased bond density of Si–N in thin films. This is due to out-diffusion of hydrogen upon ion irradiation as bond density for Si–H decreases upon irradiation. It leads to phase separation and stabilization of Si rich nitride phase as unbounded excess Si and N further form Si–Si or Si–N bond configuration, resulting in prominent Si rich silicon nitride phase.
Published Version
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