Abstract
AbstractTo prolong the operation life of electroluminescence (EL) from porous silicon (PS) diodes without affect on the efficiency, the surface passivation technique is applied to the active PS layer. By combining a postanodization electrochemical oxidation (ECO) technique for the PS layer with a surface capping by SiO2 films sputtered using electron cyclotron resonance (ECR) method, the degradation of the EL efficiency is effectively suppressed for a long time over several hours under a cw operation. It is shown that from thermal desorption spectra analyses, the capability of capped films as a barrier against penetration of water molecules is a key factor for stabilizing the EL operation due to preventing luminescent PS layers from current-induced oxidation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
