Abstract
The effect of incorporation of nitrogen atoms into the structure of reactively sputtered SiO2 was examined. It was determined that the presence of a controlled concentration of nitrogen atoms improves the electrical properties of the oxide. This could be achieved at partial pres-sure of nitrogen of about 10%. High temperature annealing improved the oxide properties. The nitrided oxides showed a better resistance to high current stress.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
